Electronic influence of ultrathin aluminum oxide on the transistor device performance of binary indium/tin oxide films
نویسندگان
چکیده
Controlled aluminum oxide doping at an atomic level into binary indium/tin thin-films allows control of crucial TFT parameters such as the mobility ( μ sat ), threshold-voltage V th ) and on/off ratio I On / Off ). Moreover, it stabilizes performance under optical stress.
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ژورنال
عنوان ژورنال: Journal of Materials Chemistry C
سال: 2022
ISSN: ['2050-7526', '2050-7534']
DOI: https://doi.org/10.1039/d2tc00285j